MMaterialsgateNEWS 2015/06/25

Related MaterialsgateCARDS

Nanowires could be the LEDs of the future

The latest research from the Niels Bohr Institute shows that LEDs made from nanowires will use less energy and provide better light.

The researchers studied nanowires using X-ray microscopy and with this method they can pinpoint exactly how the nanowire should be designed to give the best properties. The results are published in the scientific journal, ACS Nano.

Nanowires are very small - about 2 micrometers high (1 micrometer is a thousandth of a millimetre) and 10-500 nanometers in diameter (1 nanometer is a thousandth of a micrometer). Nanowires for LEDs are made up of an inner core of gallium nitride (GaN) and a layer of indium-gallium-nitride (InGaN) on the outside, both of which are semiconducting materials.

"The light in such a diode is dependent on the mechanical strain that exists between the two materials and the strain is very dependent on how the two layers are in contact with each other. We have examined a number of nanowires using X-ray microscopy and even though the nanowires should in principle be identical, we can see that they are different and have very different structure," explains Robert Feidenhans'l, professor and head of the Niels Bohr Institute at the University of Copenhagen.

Surprisingly efficient

The studies were performed using nanoscale X-ray microscopy in the electron synchrotron at DESY in Hamburg, Germany. The method is usually very time consuming and the results are often limited to very few or even a single study subject. But here researchers have managed to measure a series of upright nanowires all at once using a special design of a nanofocused X-ray without destroying the nanowires in the process.

"We measured 20 nanowires and when we saw the images, we were very surprised because you could clearly see the details of each nanowire. You can see the structure of both the inner core and the outer layer. If there are defects in the structure or if they are slightly bent, they do not function as well. So we can identify exactly which nanowires are the best and have the most efficient core/shell structure," explains Tomas Stankevic, a PhD student in the research group 'Neutron and X-ray Scattering' at the Niels Bohr Institute at the University of Copenhagen.

The nanowires are produced by a company in Sweden and this new information can be used to tweak the layer structure in the nanowires. Professor Robert Feidenhans'l explains that there is great potential in such nanowires. They will provide a more natural light in LEDs and they will use much less power. In addition, they could be used in smart phones, televisions and many forms of lighting.

The researchers expect that things could go very quickly and that they may already be in use within five years.

Source: University of Copenhagen - Niels Bohr Institute – 24.06.2015.

Investigated and edited by:

Dr.-Ing. Christoph Konetschny, Inhaber und Gründer von Materialsgate
Büro für Material- und Technologieberatung
The investigation and editing of this document was performed with best care and attention.
For the accuracy, validity, availability and applicability of the given information, we take no liability.
Please discuss the suitability concerning your specific application with the experts of the named company or organization.

You want additional material or technology investigations concerning this subject?

Materialsgate is leading in material consulting and material investigation.
Feel free to use our established consulting services

MMore on this topic

Berkeley Lab team shows metal-alloy catalysts give more control in nanowire fabrication.

A novel approach to growing nanowires promises a new means of control over their light-emitting and electronic properties. In a recent issue of Nano Letters, scientists from the U.S. Department of Energy's Lawrence Berkeley National Lab (Berkeley Lab) demonstrated a new growth technique that uses specially engineered catalysts. These catalysts, which are precursors to growing the nanowires, have given scientists more options than ever in turning the color of light-emitting nanowires. The new approach could potentially be applied to a variety of materials and be used for making next-generation devices such as solar cells, light emitting diodes, high power electronics and more, says Shaul... more read more

With its high electrical conductivity and optical transparency, indium tin oxide is one of the most widely used materials for touchscreens, plasma displays, and flexible electronics. But its rapidly escalating price has forced the electronics industry to search for other alternatives.

One potential and more cost-effective alternative is a film made with silver nanowires--wires so extremely thin that they are one-dimensional--embedded in flexible polymers. Like indium tin oxide, this material is transparent and conductive. But development has stalled because scientists lack a fundamental understanding of its mechanical properties. Now Horacio Espinosa, the James N. and Nancy J. Farley Professor in Manufacturing and Entrepreneurship at Northwestern University's McCormick School of Engineering, has led research that expands the understanding of silver nanowires' behavior in electronics. Espinosa and his team investigated the material's cyclic loading, which... more read more

A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electronic and photonic devices.

Engineers at the University of California, Davis, have recently demonstrated three-dimensional nanowire transistors using this approach that open exciting opportunities for integrating other semiconductors, such as gallium nitride, on silicon substrates. "Silicon can't do everything," said Saif Islam, professor of electrical and computer engineering at UC Davis. Circuits built on conventionally etched silicon have reached their lower size limit, which restricts operation speed and integration density. Additionally, conventional silicon circuits cannot function at temperatures above 250 degrees Celsius (about 480 degrees Fahrenheit), or handle high power or voltages, or optical... more read more


Partner of the Week

Search in MaterialsgateNEWS

Books and products